Feng Ding

The Hong Kong Polytechnic University

Feng Ding

The Mechanism of Graphene Chemical Vapor Deposition and the Routes Towards the Single Crystalline Graphene Synthesis

 

Feng Ding

Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS),Ulsan 689-798, Republic of Korea

School of Materials Science and Engineering, Ulsan National Institute of Science andTechnology (UNIST), Ulsan 689-798, Republic of Korea

Email. f.ding@unist.ac.kr

 

The epitaxial graphene growth on a catalyst surface is the most promising method of synthesizing high quality, large area graphene. A complete growth process includes (i) the nucleation of graphene domains, (ii) the expansion the domains and (iii) the coalescence of the graphene domains into a macroscopic graphene layer. In this talk, Im going to present our theoretical studies on the three topics and corresponding experimental achievements:

· During the nucleation stage on most catalyst surface, C chains that have up to 8-13 C atoms are found very stable and a transition from a sp1hybridized one dimensional (1D) C chain to a sp2two-dimensional (2D) graphene domain is necessary to initiate the graphene nucleation.[1-2] The medium sized C cluster, C21 or C24, showed exceptional stability on the catalyst surface;[3-5]

·The expansion of a graphene domain highly depends on its edge termination [6-12] and the growth/etching kinetics determines the shape of graphene domain during various processes.[13, 14].

· With the deep theoretical understanding of the mechanism of graphene CVD growth, two route towards the wafer sized graphene growth are emerged.[15-16]

 

References:

[1] J. F. Gao, et. al., J. Phys. Chem. C, 115 , 17695, (2011)

[2] J. F. Gao, et. al., J. Am. Chem. Soc., 133, 5009, (2011)

[3] Q. H. Yuan, et. al., J. Am. Chem. Soc., 133, 16072, (2011)

[4] Q. H. Yuan, et. al., J. Am. Chem. Soc., 134, 2970-2975, (2012)

[5]J. F. Gao, et., al., AngewChem-Int. Ed., in press, (2014)

[6] J. F. Gao, et. al., J. Am. Chem. Soc, 134, 6204-6209, (2012)

[7] H. Shu, et. al., ACS Nano, 6, 3243-3250 (2012)

[8] X. Y. Zhang, et. al., J. Phys. Chem. Lett., 3, 2822, (2012)

[9] Q. H. Yuan, et. al., J. Phys. Chem. Lett., 5, 3093, (2014)

[10] L. Wang, et. al., J. Am. Chem. Soc., 135, 4476 (2013)

[11] X. Y. Zhang, et. al., J. Am. Chem. Soc., 136, 3040, (2014)

[12] H. B. Shu, et. al., Chem. Sci, 5, 4639 (2014)

[13] T. Ma, et. al., PNAS, 110, 20386 (2013)

[14] Z.J. Wang et. al., Nature Communciation, 7, 13256 (2016)

[15]V.L. Nguyen, et. al.,Adv. Mat., 27, 1376,  (2015)

[16]T. R. Wu, et. al., Wu,Nature Materials, 15,43(2016)

 

BIO: Feng Ding obtained his Bs, Ms and PhD degrees from Huazhong University of Science and Technology, Fudan University and Nanjing University in 1993, 1996 and 2002, respectively. Then he was a Postdoctoral Research Fellow in Gothenburg University and Chalmers University in Sweden from 2003 to 2005. From 2005, he joined Rice University as a Research Scientist until the end of 2008. From 2009-2016, he joinedthe Institute of Textile and Clothing of Hong Kong Polytechnic University as an Assistant Professor and Associate Professor.From 2017, he joined UNIST as a Distinguished Professor and the IBS-CMCM as a group leader.

Prof. Dings research group in UNISTs research interests mainly focus on the computational method development,theoretical exploration of various carbon materialsand 2D materials, especially on their formation mechanism, the kinetics of their nucleation, growth and etching.Prof. Ding has publishedmore than160 SCI papersin leading journals of natural science, such as Nature serious journals, PRL, JACS, ACIE, etc.

 

Web: https://www.polyu.edu.hk/itc/en/people/academic-staff?itcsid=14



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