Anlian Pan

Hunan University

Anlian Pan

Band Gap and Interface Engineering of Atomic Layered Semiconductors

 

Anlian Pan

 

Abstract of Speech: Band gaps are one of the most important parameters of semiconductor materials for their optoelectronic applications since they determine the spectral features of absorptions and emission processes. Due to the limited band gaps of natural semiconductors, alloying and heterostructured semiconductors with different band gaps and spatial allignments have long been the standard methods of achieving semiconductor structures with new band gaps and functions. In this talk, I will report our recent progress on the band gap and interface engineering of two-dimensional (2D) atomically thin layered materials. I will show how to realize composition and band gap continuously modulated 2D semiconductors through alloying of two semiconductor coupound with different band gaps. More important the band gap and interface engineering within single 2D layered nanostructures have been reported, including composition graded and interficially sharped lateral heterostructures, as well as vertically stacked heterostructures with engineered inferface band structures. Some interesting optical and optoelectronic propertices and device applications will also be exhibited based on these novel 2D nanostructures.

 

Biography:

Anlian Pan received his PhD in Condensed Mater Physics from the Institute of Physics, Chinese Academy of Sciences, in 2006. From 2006 to 2007, he worked as a Humboldt Research Fellow at the Max Planck Institute of Microstructure Physics. Later in 2007, he joined Arizona State University as a Postdoctoral Fellow, where he became a Research Assistant Professor. He is currently a Professor of Physics and Material Science in Hunan University, and is the director of the Key Laboratory for Micro-Nano Physics and Technology of Hunan Province. He has published over 160 papers in the international Journals, with more than 30 papers in the top Journals, like Physical Review Letters, Nature Nanotechnology, Chem. Soc. Rev., J. Am. Chem. Soc., Adv. Mater and Nano Letters. He has ever organized or co-organized some important international conferences, and is the editoral board member of some international academic journals. He has been awarded quite some academic prizes or honors, like the National Science Fund for Distinguished Young Scholars, the Natural Science Award of Hunan Province, and the Distinguished Young Scientist Award of Hunan. His main research interests lie in controlled growth and integrated photonics device applications of low-dimensional semiconductor nanostructures.

 

Web: http://nanophotonics.hnu.cn/group/group_showhome

 

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